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absolute maximum ratings parameter units i d @ v gs = 4.5v, t c = 25c continuous drain current 0.8 i d @ v gs = 4.5v, t c = 100c continuous drain current 0.5 i dm pulsed drain current 3.2 p d @ t c = 25c max. power dissipation 1.4 w linear derating factor 0.01 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 50.4 mj i ar avalanche current 0.8 a e ar repetitive avalanche energy 0.14 mj dv/dt peak diode recovery dv/dt 12.3 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in/1.6mm from case for 10s) weight 1.3 (typical) g o c a www.irf.com 1 technology product summary part number radiation level r ds(on) i d irhlg77214 100k rads (si) 1.1 ? 0.8a irhlg73214 300k rads (si) 1.1 ? 0.8a for footnotes refer to the last page pre-irradiation radiation hardened irhlg77214logic level power mosfet 250v, quad n-channel thru-hole (mo-036ab) features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed light weight mo-036ab 2n7614m1 international rectifiers r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl controlcircuits to power devices in space and other radiation environments.the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.this is achieved while maintaining single event gate rupture and single event burnout immunity. the device is ideal when used to interface directly with most logic gates, linear ics, micro-controllers, and other device types that operate from a 3.3-5v source. it may also be used to increase the output current of a pwm, voltage comparator or an operational amplifier where the logic level drive signal is available. pd-97339 downloaded from: http:///
irhlg77214, 2n7614m1 pre-irradiation 2 www.irf.com source-drain diode ratings and characteristics (per die) parameter min typ max units test conditions i s continuous source current (body diode) 0.8 i sm pulse source current (body diode) 3.2 v sd diode forward voltage 1.2 v t j = 25c, i s = 0.8a, v gs = 0v t rr reverse recovery time 290 ns t j = 25c, i f = 0.8a, di/dt 100a/ s q rr reverse recovery charge 388 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics for each n-channel device @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 250 v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown 0.34 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 1.1 ? v gs = 4.5v, i d = 0.5a resistance v gs(th) gate threshold voltage 1.0 2.0 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient -6.0 mv/c g fs forward transconductance 1.0 s v ds = 15v, i ds = 0.5a i dss zero gate voltage drain current 1.0 v ds = 200v ,v gs = 0v 1 0 v ds = 200v, v gs = 0v, t j =125c i gss gate-to-source leakage forward 100 v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v q g total gate charge 15 v gs = 4.5v, i d = 0.8a q gs gate-to-source charge 3.5 nc v ds = 125v q gd gate-to-drain (miller) charge 8.3 t d (on) turn-on delay time 18 v dd = 125v, i d = 0.8a, t r rise time 85 v gs = 4.5v, r g = 7.5 ? t d (off) turn-off delay time 35 t f fall time 30 l s + l d total inductance 10 measured from drain lead (6mm /0.25in from pack.) to source lead (6mm/0.25in from pack.)with source wire internally bonded from source pin to drain pad c iss input capacitance 552 v gs = 0v, v ds = 25v c oss output capacitance 69 pf f = 1.0mhz c rss reverse transfer capacitance 1.43 na nh ns a thermal resistance (per die) parameter min typ max units test conditions r thja junction-to-ambient 90 c/w typical socket mount note: corresponding spice and saber models are available on international rectifier web site. r g gate resistance 6.77 ? f = 1.0mhz, open drain downloaded from: http:///
www.irf.com 3 pre-irradiation irhlg77214, 2n7614m1 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capabil-ity. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. typical single event effect, safe operating area table 1. electrical characteristics @ tj = 25c, post total dose irradiation (per die) parameter up to 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 250 v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.0 v gs = v ds , i d = 250a i gss gate-to-source leakage forward 100 na v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v i dss zero gate voltage drain current 10 a v ds = 200v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-39) ?? ? v gs = 4.5v, i d = 0.5a r ds(on) static drain-to-source on-state v sd diode forward voltage 1.2 v v gs = 0v, i d = 0.8a resistance (mo-036ab) 1.1 ? v gs = 4.5v, i d = 0.5a 1. part numbers irhlg77214, irhlg73214 table 2. typical single event effect safe operating area let energy range vds (v) (mev/(m g /cm 2 )) (mev) ( m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -2v -4v -5v -6v -7v 38 5% 300 7.5% 38 7.5% 250 250 250 250 250 250 62 5% 355 7.5% 33 7.5% 250 250 250 250 250 - 85 5% 380 7.5% 29 7.5% 250 250 250 250 - - 0 50 100 150 200 250 300 -7 -6 -5 -4 -3 -2 -1 0 bias vgs (volts) bias vds (volts) let=38 5% let=62 5% let=85 5% downloaded from: http:///
irhlg77214, 2n7614m1 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 6 0 s pulse width, tj=25c vgs top 10v 4.5v 4.0v 3.5v 3.0v 2.75v 2.50v bottom 2.25v 2.25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.25v vgs top 10v 4.5v 4.0v 3.5v 3.0v 2.75v 2.50v bottom 2.25v 2 2.2 2.4 2.6 2.8 3 v gs , gate-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 0.8a downloaded from: http:///
www.irf.com 5 pre-irradiation irhlg77214, 2n7614m1 fig 8. typical threshold voltage vs temperature fig 7. typical drain-to-source breakdown voltage vs temperature fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current 0 0.5 1 1.5 2 2.5 3 3.5 4 i d , drain current (a) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 150c vgs = 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 250 270 290 310 330 350 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 0.8a t j = 25c t j = 150c downloaded from: http:///
irhlg77214, 2n7614m1 pre-irradiation 6 www.irf.com fig 11. typical source-to-drain diode forward voltage fig 12. maximum drain current vs. case temperature fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 1200 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 4 8 12 16 20 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 200v v ds = 125v v ds = 50v i d = 0.8a for test circuit see figure 17 25 50 75 100 125 150 t c , case temperature (c) 0 0.2 0.4 0.6 0.8 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
www.irf.com 7 pre-irradiation irhlg77214, 2n7614m1 fig 15. maximum effective transient thermal impedance, junction-to-ambient fig 13. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.80a 0.50a bottom 0.36a 1 10 100 1000 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc downloaded from: http:///
irhlg77214, 2n7614m1 pre-irradiation 8 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
1

0.1 % + - downloaded from: http:///
www.irf.com 9 pre-irradiation irhlg77214, 2n7614m1 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 200 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 157mh peak i l = 0.8a, v gs = 10v i sd 0.8a, di/dt 340a/ s, v dd 250v, t j 150c footnotes: case outline and dimensions mo-036ab ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/2011 downloaded from: http:///

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